My major research interest is in the area of development and characterization of new plasma etch processes for semiconductor device fabrication. The Plasma Research Laboratory is currently collaborating with engineers in industry and government laboratories who have provided us with materials and additional testing capabilities. Our current research deals with the development of etch processes for wide bandgap semiconductors such as SiC, GaN, and ZnO. Previous research topics have included the development of a GaAs via hole etch process which has been used on real device wafers in an effort with TRW; the development of a selective gate recess etch with TriQuint Semiconductor, a comprehensive study on the effects of the addition of gases such as SF6 and N2 on the plasma electron densities and GaAs etch rates of BCl3 and SiCl4 discharges.
